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Thursday, July 11

Intentional Defects in Graphene

Kirk Bevan, McGill University, Montreal
Materials Science and Technology Division Seminar
11:00 AM — 12:00 PM, Chemical and Material Sciences Building (4100), Room C-201
Contact: Zac Ward (wardtz@ornl.gov), 865.576.4278

Abstract

Since the dawn of the semiconductor industry, intentional defects have been introduced into electronic materials to create electronic devices. For the same reason, intentional defects are introduced into graphene to modify its electronic structure. In this talk an overview of our recent work on oxygen, nitrogen, and boron defects will be presented. We will argue that although atomic precision can be obtained through defect engineering, the necessary introduction of defects has an unfortunate impact on the overall carrier mobility of graphene. Implications for future devices based on graphene will be discussed.