Paul Kent -> Pictures-> Isolated nitrogen impurity in GaP


A localized state surrounds an isolated nitrogen impurity in GaP (GaP:N)

Nitrogen, when added to GaP, induces localized electronic states just below the conduction band edge. This strongly influences the optical properties of the material. e.g. While GaP does not emit light, GaP:N emits strongly. Understanding the properties of a single nitrogen was an important step in understanding the properties of nitrogen pairs, clusters, and eventually the alloys GaPN and GaAsN.

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